N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138
- RS Stock No.:
- 6710324
- Mfr. Prt No.:
- BSS138
- Brand:
- ON Semiconductor
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
EU Directives 2011/65/EU and 2015/863 restrict the use of the 10 substances below in the manufacture of specified types of electrical equipment.
Whilst this restriction does not legally apply to components, it is recognised that component “compliance” is relevant to many customers.
RS definition of RoHS Compliance:
- The product does not contain any of the restricted substances in concentrations and applications banned by the Directive,
- and for components, the product is capable of being worked on at the higher temperatures required by lead–free soldering
The restricted substances and maximum allowed concentrations in the homogenous material are, by weight:
| Substance | Concentration |
| Lead | 0.1% |
| Mercury | 0.1% |
| PBB (Polybrominated Biphenyls) | 0.1% |
| PBDE ( Polybrominated Diphenyl Ethers) | 0.1% |
| Hexavalent Chromium | 0.1% |
| Cadmium | 0.01% |
| DEHP (Bis (2-Ethylhexl) phthalate) | 0.1% |
| BBP (Benzyl butyl phthalate) | 0.1% |
| DBP (Dibutyl phthalate) | 0.1% |
| DIBP (Diisobutyl phthalate) | 0.1% |
The supplier of the item listed below has informed RS Components that the product is "RoHS Compliant".
RS Components has taken all reasonable steps to confirm this statement. Information relates only to products sold on or after the date of this certificate.
| RS stock number | 6710324 |
| Product description | N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138 |
| Manufacturer / Brand | ON Semiconductor |
| Manufacturer part number | BSS138 |
RS Components Ltd, Birchington Road, Corby, Northants, NN17 9RS, UK
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
| RS stock number | 6710324 |
| Product description | N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23 onsemi BSS138 |
| Manufacturer / Brand | ON Semiconductor |
| Manufacturer part number | BSS138 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | May 8, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Product Details
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
| Attribute | Value |
| Brand | ON Semiconductor |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Mounting Type | Surface Mount |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
| Maximum Drain Source Resistance | 3.5 Ω |
| Height | 0.93 mm |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Maximum Operating Temperature | +150 °C |
| Length | 2.92 mm |
| Maximum Gate Threshold Voltage | 1.5 V |
| Channel Type | N |
| Width | 1.3 mm |
| Maximum Power Dissipation | 360 mW |
| Minimum Gate Threshold Voltage | 0.8 V |
| Channel Mode | Enhancement |
| Pin Count | 3 |
| Maximum Drain Source Voltage | 50 V |
| Transistor Material | Si |
| Maximum Continuous Drain Current | 220 mA |
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