N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1

RS Stock No.:
8259162
Mfr. Prt No.:
IPD031N06L3GATMA1
Brand:
Infineon

Technical Reference

Legislation and Compliance

RoHS Status: Exempt

Statement of Conformity

RS Components
Statement of Conformity

This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.

Compliant Product Details
RS stock number 8259162
Product description N-Channel MOSFET, 100 A, 60 V, 3-Pin DPAK Infineon IPD031N06L3GATMA1
Manufacturer / Brand Infineon
Manufacturer part number IPD031N06L3GATMA1

The foregoing information relates to product sold on, or after, the date shown below.

RS COMPONENTS

Date Mar 29, 2024

RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132


Product Details

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating


Specifications

Attribute Value
Brand Infineon
Maximum Power Dissipation 167 W
Number of Elements per Chip 1
Series OptiMOS 3
Minimum Operating Temperature -55 °C
Maximum Gate Source Voltage -20 V, +20 V
Maximum Drain Source Resistance 5.2 mΩ
Mounting Type Surface Mount
Transistor Configuration Single
Package Type DPAK (TO-252)
Maximum Operating Temperature +175 °C
Length 6.73 mm
Typical Gate Charge @ Vgs 59 nC @ 4.5 V
Maximum Gate Threshold Voltage 2.2 V
Channel Type N
Height 2.413 mm
Width 6.223 mm
Minimum Gate Threshold Voltage 1.2 V
Channel Mode Enhancement
Pin Count 3
Maximum Drain Source Voltage 60 V
Transistor Material Si
Maximum Continuous Drain Current 100 A
Checking stock...
VND
636,215.00
Out of stock
Price Reel (1 Reel of 10)
Reel(s)Per Reel(VND)Per Unit(VND)
1636,215.0063,621.50
*price per unit indicative
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