N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
- RS Stock No.:
- 1783877
- Mfr. Prt No.:
- SQ2364EES-T1_GE3
- Brand:
- Vishay Siliconix
Technical Reference
Legislation and Compliance
RoHS Status: Not Applicable
Statement of Conformity
RS Components
Statement of Conformity
This statement confirms that the product detailed below complies with the specifications currently published in the RS media and has been subject to the strict quality conditions imposed by RS Components’ internal management systems. Furthermore and where applicable, it confirms that all relevant semiconductor devices have been handled and packed under conditions that meet the administrative and technical requirements of ANSI/ESD S20.20 and EN61340-5-1 electrostatics control standards.
Compliant Product Details
| RS stock number | 1783877 |
| Product description | N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3 |
| Manufacturer / Brand | Vishay Siliconix |
| Manufacturer part number | SQ2364EES-T1_GE3 |
The foregoing information relates to product sold on, or after, the date shown below.
RS COMPONENTS
| Date | Apr 24, 2024 |
RS Components Pte Ltd Robinson Road, P.O. Box 1582, Singapore 903132
Country of Origin: CN
Product Details
Specifications
| Attribute | Value |
| Brand | Vishay Siliconix |
| Channel Type | N |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.46 V |
| Minimum Gate Threshold Voltage | 1 V |
| Maximum Power Dissipation | 3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 2 nC @ 4.5 V |
| Height | 1.02 mm |
| Width | 1.4 mm |
| Series | TrenchFET |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2 V |
| Maximum Operating Temperature | +175 °C |
| Automotive Standard | AEC-Q101 |
| Length | 3.04 mm |
| Transistor Material | Si |
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